International Journal of High Speed Electronics and Systems Vol. 14, No. 2 (June 2004)
Special Issue On Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices Edited by R. D. Schrimpf and D. M. Fleetwood
The electronic version of this issue is available from the journal's web site at no charge. View table-of-contents and abstracts at
Preface
Single Event Effects In Avionics And On The Ground Eugene Normand
Soft Errors In Commercial Integrated Circuits R=2E C. Baumann
Single-Event Effects In Iii-V Semiconductor Electronics Dale Mcmorrow, Joseph S. Melinger And Alvin R. Knudson
Investigation Of Single-Event Transients In Fast Integrated Circuits With A Pulsed Laser P=2E Fouillat, V. Pouget, D. Lewis, S. Buchner And D. Mcmorrow
System Level Single Event Upset Mitigation Strategies W=2E F. Heidergott
Radiation-Tolerant Design For High Performance Mixed-Signal Circuits W=2E T. Holman
A Total-Dose Hardening-By-Design Approach For High-Speed Mixed-Signal Cmos Integrated Circuits Nathan Nowlin, John Bailey, Bob Turfler And Dave Alexander
Radiation Issues In The New Generation Of High Energy Physics Experiments F=2E Faccio
Space Radiation Effects In Optocouplers Robert A. Reed, Paul W. Marshall And Kenneth A. Label
Radiation Effects In Charge-Coupled Device (Ccd) Imagers And Cmos Active Pixel Sensors G=2E R. Hopkinson And A. Mohammadzadeh
The Effects Of Space Radiation Exposure On Power Mosfets: A Review K=2E Shenai, K.F. Galloway And R.D. Schrimpf
Introduction To Soi Mosfets: Context, Radiation Effects, And Future Trends Sorin Cristoloveanu And V=E9ronique Ferlet-Cavrois
Total-Dose And Single-Event Effects In Silicon-Germanium Heterojunction Bipolar Transistors John D. Cressler
Gain Degradation And Enhanced Low-Dose-Rate Sensitivity In Bipolar Junction Transistors R=2E D. Schrimpf
Total Dose Effects In Linear Bipolar Integrated Circuits H=2E J. Barnaby
Hardness Assurance For Commercial Microelectronics Ronald L. Pease
Ionizing Radiation Effects On Ultra-Thin Oxide Mos Structures A=2E Cester And A. Paccagnella
Hydrogen At The Si/Sio2 Interface: From Atomic-Scale Calculations To Engineering Models S=2E N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf And S. T. Pantelides
Switching Oxide Traps Timothy R. Oldham
Online And Realtime Dosimetry Using Optically Stimulated Luminescence L=2E Dusseau And J. Gasiot
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