I have a 400 nm thick TiN/GaN multilayer film on a Al2O3 substrate and i want to do a cross-plane electrical measurement of this film for which i have to make a back contact to the bottom TiN layer (since the substrate is insulating). Any ideas? I was planning to dry etch the multilayer from top using either laser etching, reactive ion etching or FIB, but all of them have complications. All ideas/opinions are welcome?
~vijay
Ion gun etch in ultrahigh vacuum. Not sure how you'd know where you are in the cross-section without removing from vacuum and doing ellipsometry or something like that. You should consider doing the electrical measurements in ultrahigh vacuum as well, as I think the TiN will at least partially revert back to the oxide in the presence of oxygen.
Have something to add? Share your thoughts — no account required.
Ask the community — no account required