Field-effect transistor based on KTaO3 perovskite

And now it seems to me a revolutionary step in FETs!!!
...K. Ueno et al. report about fabrication of an n-channel accumulation-type field-effect transistor utilizing a KTaO3 single
crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator....
Full story read here
What"d you say?
Add pictures here
<% if( /^image/.test(type) ){ %>
<% } %>
Add image file
Upload is a website by engineers for engineers. It is not affiliated with any of manufacturers or vendors discussed here. All logos and trade names are the property of their respective owners.