CV-measurements in MOS/MIS: accumulation characteristics

Hi,
Does anybody has explanation for a non-saturation behavior in the accumulation region of the Capacitance-Voltage characteristics of an
MOS-device:
2 possibilities: 1)C raises with raising voltage and does not saturate 2) C first raises, saturates, and then breaks down.
Does anybody has a good reference?
Thanks!
Sincerely, Stephan
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